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| Power Transistors 2SD1773 Silicon NPN triple diffusion planar type Darlington For midium speed switching Complementary to 2SB1193 Unit: mm 0.70.1 10.00.2 5.50.2 2.70.2 4.20.2 4.20.2 7.50.2 s Features q q q 4.0 High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw (TC=25C) Ratings 120 120 7 12 8 50 2 150 -55 to +150 Unit V V V A A W C C 16.70.3 3.10.1 1.40.1 1.30.2 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 14.00.5 0.5 -0.1 0.80.1 +0.2 2.540.25 5.080.5 1 2 1:Base 2:Collector 3:Emitter TO-220 Full Pack Package(a) 3 Internal Connection C B s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage E (TC=25C) Symbol ICBO ICEO VCEO(sus) VEBO hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT ton tstg tf Conditions VCB = 120V, IE = 0 VCE = 100V, IB = 0 IC = 2A, L = 10mH IE = 50mA, IC = 0 VCE = 3V, IC = 4A IC = 4A, IB = 8mA IC = 8A, IB = 80mA IC = 4A, IB = 8mA IC = 8A, IB = 80mA VCE = 10V, IC = 0.5A, f = 1MHz IC = 4A, IB1 = 8mA, IB2 = -8mA, VCC = 50V 20 0.7 6 2 120 7 1000 20000 1.5 3 2 3.5 V V V V MHz s s s min typ max 100 10 Unit A A V V Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time 1 Power Transistors PC -- Ta 80 10 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) Without heat sink (PC=2W) (1) TC=25C IB=5mA 2SD1773 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 30 VCE(sat) -- IC (1) IC/IB=500 (2) IC/IB=250 (3) IC/IB=100 TC=25C (1) Collector power dissipation PC (W) 70 60 50 40 30 20 10 0 0 20 40 (2) (3) Collector current IC (A) 8 4mA 3mA 10 6 2mA 3 (2) 1mA 4 0.5mA 1 (3) 2 0.2mA 0.3 0 60 80 100 120 140 160 0 2 4 6 8 10 12 0.1 0.1 0.3 1 3 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC Base to emitter saturation voltage VBE(sat) (V) 30 (1) IC/IB=500 (2) IC/IB=250 (3) IC/IB=100 TC=25C 30000 hFE -- IC 100 VCE=3V 30 ton, tstg, tf -- IC Pulsed tw=1ms Duty cycle=1% IC/IB=500 (IB1=-IB2) VCC=50V TC=25C Forward current transfer ratio hFE Switching time ton,tstg,tf (s) 10 10000 TC=100C 10 3 tstg 3 (1) 1 (2) 3000 -25C 25C tf 1 0.3 0.1 0.03 ton (3) 1000 0.3 300 0.1 0.1 0.3 1 3 10 100 0.1 0.01 0.3 1 3 10 0 1 2 3 4 5 6 7 8 Collector current IC (A) Collector current IC (A) Collector current IC (A) Area of safe operation (ASO) 100 30 102 Non repetitive pulse TC=25C ICP 10 IC 3 10ms 1 0.3 0.1 0.03 0.01 1 3 10 30 100 300 1000 DC t=1ms Rth(t) -- t (1) Without heat sink (2) With a 100 x 100 x 2mm Al heat sink (1) Thermal resistance Rth(t) (C/W) Collector current IC (A) 10 (2) 1 10-1 10-2 10-3 10-2 10-1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2 |
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